| 摘要 |
Impurities of a conductivity type opposite to a semiconductor substrate are ion-implanted utilizing as a mask a resist or the like formed on the major surface of the semiconductor substrate. Impurity regions spaced apart from each other by a predetermined distance are formed by heat treatment. Conductive layers are formed over the respective impurity regions. A conductive material is formed on an exposed semiconductor substrate through an oxide film to cover the conductive layers, and patterned in a predetermined shape. In addition, conductive layers spaced apart form each other by a predetermined distance are formed on the major surface of the semiconductor substrate. Impurities of the conductivity type opposite to that of the semiconductor substrate are ion-implanted into the conductive layers. The impurities included in the conductive layers are diffused into the semiconductor substrate by heat treatment, so that impurity regions spaced apart from each other by a predetermined distance are formed. A conductive material is formed on the exposed semiconductor substrate through an oxide film to cover the conductive layers, and patterned in a predetermined shape.
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