| 摘要 |
<p>The present invention relates to an electrically programmable nonvolatile memory composed of a grid of word lines (LM2) extending along a first direction referred to as a row direction, and of bit lines (LB2 to LB4) extending along a second direction referred to as a column direction. A conductive zone (25) formed by a second level of polycrystalline silicon contacts and covers the floating gate (23) of each transistor, projecting in the direction of the rows. The conductive zone (25) in each transistor is opposite the word line connected to the transistor, this word line corresponding, at the site of the conductive zones, to the control gate (28). <IMAGE></p> |
