| 摘要 |
The forming method of a passivation film (I) on a circuit and/or circuit elements (II) formed on the surface of a semiconductor chip involves patterning (I) with a resist film, which is part of (I) after being subjected to post-baking. The upper layer of (I) is made of light-sensitive polyimide, silicone resin, epoxy resin or a silicone ladder polymer. The semiconductor, upon which (I) is coated, is mounted on a lead frame, wire bonded and then entirely reinforced inclusive of all windows opened in (I).
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