发明名称 Microwave plasma treatment apparatus.
摘要 <p>A microwave plasma treatment apparatus comprises a plurality of auxiliary magnets (411, ..., 448) arranged around the periphery of a plasma formation chamber (10). A plurality of auxiliary magnets are disposed along the circumference of the plasma formation chamber while a plurality of auxiliary magnets may also be arranged in the axial direction of the plasma formation chamber. Also, the magnetic poles of every auxiliary magnet are respectively of opposite polarity to the adjoining magnetic poles of an auxiliary magnet(s) disposed adjacent thereto either along the circumference of the plasma formation chamber or in the axial direction thereof. This enables the whole high-density plasma to be substantially uniform throughout the inside of the plasma formation chamber.</p>
申请公布号 EP0360534(A2) 申请公布日期 1990.03.28
申请号 EP19890309461 申请日期 1989.09.18
申请人 ANELVA CORPORATION 发明人 SUZUKI, YASUHIRO C/O ANELVA CORPORATION;MORI, SUMIO C/O ANELVA CORPORATION;FUJIYAMA, EIJI C/O ANELVA CORPORATION;SASAKI, MASAMI C/O ANELVA CORPORATION
分类号 H01L21/302;C23C16/44;C23C16/511;C23F4/00;H01J37/32;H01L21/205;H01L21/3065;H01L21/31;H05H1/46 主分类号 H01L21/302
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