| 摘要 |
Semiconductor device having a contact area for connecting upper and lower conductive layers has an e.g. SiO2 insulating layer (12) formed on a semiconductor substrate (11) with polycrystalline Si conductive layer (13) formed on a local area of the insulating layer. A polycrystalline conductive Si layer is then formed and selectively etched to form a thin conductive layer (14) on a predetermined region of the lower two layers. A SiO2 insulating layer (15) is then formed on the first insulating layer and conductive layer, part of it being selectively etched to form a contact hole, exposing part of one conductive layers (13,14) and forming a contact hole. An Al wiring layer (16) then completes the device.
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