发明名称 |
METHOD OF FORMING A FINE PATTERN |
摘要 |
forming an etching mask of organic material for the desired pattern and also a dummy etching mask of organic material; and reactive ion etching using both masks to form the desired pattern and a pattern corresponding to the dummy mask. The pattern formed by the dummy mask is pref. formed in spaces in between the desired pattern and does not have any electrical effect on the operation of the desired pattern.
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申请公布号 |
KR900002085(B1) |
申请公布日期 |
1990.03.31 |
申请号 |
KR19860008630 |
申请日期 |
1986.10.15 |
申请人 |
TOSHIBA CORP. |
发明人 |
HASEKAYWA IEESAHIRO |
分类号 |
H01L21/302;H01L21/3065;H01L21/308;H01L21/3213;H01L21/768;(IPC1-7):H01L21/308 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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