A method for forming a pattern.

摘要

The method for stably forming a resist pattern of ultrafine width in a relatively short time by selectively irradiating a charged particle beam onto a substrate (9) in an atmosphere containing a raw material gas, provides the adjustment of the gas pressure to 10<-><7> to 10<-><5> Torr, of an accelerating voltage of the charged particle beam to 0.5 to 6 kv, and of a beam current of the charged particle beam to 10<-><1><3> to 10<-><7> A. Alternatively, the method comprises the irradiating of a charged particle beam onto a substrate in an atmosphere containing a gaseous negative type resist, the bridge reaction of the negative type resist molecules adsorbed on the surface of the substrate, and forming of a pattern from the negative type resist molecules which caused the bridge reaction, so that a pattern is produced which has an ultrafine width and can be easily removed by a wet process.