| 摘要 |
PURPOSE:To reduce an ON resistance by a method wherein ring-shaped gates formed so as to be separated at individual cells and a gate wiring metal used to connect the ring-shaped gates are formed and a source metal electrode used to connect sources of the individual cells is arranged and installed on the gate wiring metal so as to be insulated. CONSTITUTION:Polysilicon gates 7 are formed to be ring-shaped on an oxide film 6 by a CVD method or the like. A gate wiring aluminum layer 8 is formed by an evaporation method or the like in such a way that the polysilicon gates formed to be ring-shaped so as to be separated at individual unit cells are connected. In addition, an aluminum layer of a source-electrode metal 10 is applied to the whole surface via an interlayer PSG layer by the evaporation method or the like in such a way that source parts 5 of the unit cells are connected; then, a passivating PSG film 11 is applied. Thereby, the ring-shaped gates 7 are connected directly at a shortest distance by using the gate wiring metal 8; accordingly, a gate resistance is reduced; since the gate wiring metal 8 is formed to be laminar on the whole surface of a chip, this transistor can be made small-sized. |
