Method for reducing mobile ion contamination in semiconductor integrated circuits.

摘要

In a method of fabricating semiconductor integrated circuits, the effects of mobile ion contamination in a dielectric layer which has been subjected to a source of mobile ion contamination, e.g. reactive ion etching, is substantially eliminated by removing substantially only the topmost portion of the dielectric layer, e.g. 10--15nm of an 800nm layer, promptly after performing the step which produced the source of contamination.