发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PROVIDED WITH BUMP ELECTRODE
摘要 <p>PURPOSE:To increase the number of wiring layers and to constitute this devide rationally by a method wherein a metal film functions as a substratum film of a bump electrode and connection films are connected mutually on a protective film. CONSTITUTION:Connection films 3a to 3d as one layer are arranged and installed on an insulating film 2 covering the surface of a substrate 1; and the films are covered with a protective film 6. Windows leading to the films 3a to 3d are opened; a two-layer metal film 7 (a layer 7a of titanium and a layer 7b of palladium) is applied to the whole surface of the film 6. The palladium is etched mechanically by making use of a photoresist film 10 as a mask; the whole surface is spin-coated with a photoresist film 11; a window is opened; a solder 8a is grown. Then, the film 11 is removed; the titanium is removed completely by making use of the palladium as a mask; the solder 8a is melted from a short time; and a bump electrode 8 is formed. The metal film 7 functions as a substratum film of the electrode 8; and the films 3b and 3d are interconnected on the film 6.</p>
申请公布号 JPH02170434(A) 申请公布日期 1990.07.02
申请号 JP19880324321 申请日期 1988.12.22
申请人 FUJI ELECTRIC CO LTD 发明人 SAITO MINORU
分类号 H01L21/60;H01L21/321 主分类号 H01L21/60
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