| 摘要 |
PURPOSE:To make it possible to control a stable film composition by arranging plural evaporation sources high in mutual interference in a state dispersed above and below through a substrate holder to exclude the mutual interference between plural evaporation sources. CONSTITUTION:Below a substrate holder 3 in a vacuum chamber, an upwardly directed evaporation source A accommodating an evaporative material, for example, Ti is provided. On the other hand, above the holder 3, a downardly directed evaporation source C accommodating an evaporative material, for example, gold is provided. Plural substrates 2 on the holder 3 are revolved by the holder 3 while positive potential is respectively applied to anodes 61, 62 by power sources 81, 82 to ionize the evaporation sources A, C and positive potential is applied to the substrates 2 by a substrate power source 4. In forming an eutectic film of titanium nitride and gold, a N2-containing gas and an inert gas are respectively introduced from introducing ports 91, 92. By this method, nitriding reaction of Ti vapor is promoted and the evaporation amount of gold is also stabilized. |
