DRY ETCHING METHOD FOR SILICON NITRIDE LAYER,申请号KR1019850010029-传众专利搜索

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发明名称	DRY ETCHING METHOD FOR SILICON NITRIDE LAYER
摘要
申请公布号	KR1019900006020(B1)	申请公布日期	1990.08.20
申请号	KR1019850010029	申请日期	1985.12.28
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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