| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern can be formed in a few number of processes.SOLUTION: The method includes steps of: forming a resist pattern on a base film 14; slimming the resist pattern; depositing an etching product produced by etching the base film on a surface of the slimmed resist pattern 15a to form a pinning part 16 having affinity to a first polymer; forming a neutralization film 18 on the etched base film; forming a block copolymer film comprising the first polymer and a second polymer on the pinning part and the neutralization film; subjecting the block copolymer film to a predetermined treatment to perform micro phase separation, and thereby to form a micro phase separation pattern in which a first portion 21 formed of the first polymer and a second portion 22 formed of the second polymer are alternately disposed and the first portion is disposed on the pinning part.SELECTED DRAWING: Figure 3 |
