Method for determining interface properties of semiconductor materials by photoreflectance.

摘要

A method for determining information about properties at interfaces of semi-conductor materials in which a probe beam monochromatic light is directed onto a material sample which is itself electromodulated by a modulated pump beam, whereby the light reflected from the sample is detected to produce a d.c. signal and an a.c. signal, and after normalizing the procedure, the shifts of energy gaps in the band gaps are evaluated to obtain information about at least one externally applied parameter crossing such shift.