| 摘要 |
PURPOSE:To accurately inspect a wafer which has a resist film of simple constitution from on the substrate surface by generating heterogeneous reflected light beams as reflected light from a large-grain wiring pattern and reflected light from foreign matter when the wafer is inspected. CONSTITUTION:The wafer is inspected by forming a resist film which contains dye having its absorption band at the wavelength of incident light 4 used for the inspection of a semiconductor device 1, e.g. 400 - 700nm on the wiring pattern 2 on the substrate 1 or the surface of the foreign matter 3. When the foreign matter is not present, almost all of irregularity reflected light reflected by the unevenness 2 of the wiring pattern 2 is absorbed by the resist film 6 and reflected light 5 from the film 6 formed on the surface of the pattern 2 never becomes irregularly reflected light. If there is the foreign matter 3, almost all of the irregularity reflected light from the unevenness 2a of the pattern 2 is absorbed by the film and the reflected light never becomes irregularity reflected light, but the reflected light 5 from the film 6 which is formed on the surface of the foreign matter 3 and has large curvature becomes irregularly reflected light, so that this case can securely be discriminated from the case wherein the foreign matter is absent. |
