| 摘要 |
A three step annealing treatment for Hg1-xCdxTe includes a high temperature anneal to reduce excess tellurium, followed by an intermediate temperature anneal to reduce the supersaturation of metal vacancies, and lastly a low temperature anneal to reduce metal vacancies. The intermediate anneal reduces the metal vacancy concentration sufficiently that microvoids do not form from condensation of metal vacancies in desired portions of the Hg1-xCdxTe during the low temperature anneal. Alternate preferred embodiments include more than three steps and incremental cooling. |
