Manufacturing process for high-frequency bipolar transistors,申请号US19880259261-传众专利搜索

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发明名称	Manufacturing process for high-frequency bipolar transistors
摘要
申请公布号	US5013672(A)	申请公布日期	1991.05.07
申请号	US19880259261	申请日期	1988.10.18
申请人	SGS-THOMSON MICROELECTRONICS S.R.L.	发明人	ZAMBRANO, RAFFAELE
分类号	H01L21/033;H01L21/762	主分类号	H01L21/033
代理机构		代理人
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