发明名称 Method for Forming Projections and Depressions, Sealing Structure, and Light-Emitting Device
摘要 A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.
申请公布号 US2016322608(A1) 申请公布日期 2016.11.03
申请号 US201615211444 申请日期 2016.07.15
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Nishido Yusuke
分类号 H01L51/52;H01L51/56;C23F1/12 主分类号 H01L51/52
代理机构 代理人
主权项
地址 Kanagawa-ken JP