发明名称 OPTICAL DETECTOR
摘要 Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor is configured between the semiconductor region 14 and the signal read wiring E3. High frequency components peak components of a carrier are quickly extracted to the outside via the capacitor, but the signal read wiring E3 covers the boundary line BY so that a semiconductor potential in the vicinity of the boundary line is stabilized and an output signal is stabilized.
申请公布号 US2016322417(A1) 申请公布日期 2016.11.03
申请号 US201415104359 申请日期 2014.12.16
申请人 HAMAMATSU PHOTONICS K.K. 发明人 NAGANO Terumasa;SATO Kenichi;TSUCHIYA Ryutaro
分类号 H01L27/146;H01L31/115 主分类号 H01L27/146
代理机构 代理人
主权项 1. An optical detector comprising: a semiconductor substrate; a first semiconductor region formed on the semiconductor substrate; a plurality of second semiconductor regions formed two-dimensionally within the first semiconductor region and having a higher impurity concentration than the first semiconductor region; a plurality of quenching resistors electrically connected to the second semiconductor regions, respectively; and a signal read wiring electrically connected to the plurality of quenching resistors, wherein the optical detector comprises a pn junction that forms an APD operable in a Geiger mode formed in an interface between the semiconductor substrate and the first semiconductor region or an interface between the first semiconductor region and the second semiconductor region, wherein the quenching resistor is positioned above the second semiconductor region, and wherein, in a plan view, the signal read wiring surrounds a circumference of each second semiconductor region in a ring shape and covers a boundary line between the second semiconductor region and the first semiconductor region.
地址 Shizuoka JP