SEMICONDUCTOR DEVICE INCLUDING BUILT-IN CRACK-ARRESTING FILM STRUCTURE

摘要

A wafer-to-wafer semiconductor device includes a first wafer substrate having a first bonding layer formed on a first bulk substrate layer. A second wafer substrate includes a second bonding layer formed on a second bulk substrate layer. The second bonding layer is bonded to the first bonding layer to define a bonding interface. At least one of the first wafer substrate and the second wafer substrate includes a crack-arresting film layer configured to increase a bonding energy of the bonding interface.

主权项

1. A semiconductor wafer, comprising:
an oxide layer formed on an upper surface of a substrate layer, the substrate layer and oxide layer each extending along a first axis to define a length and a second axis opposite the first axis to define a thickness; a crack-arresting layer formed on an upper surface of the oxide layer; and a bonding layer formed on an upper surface of the crack-arresting layer, the crack-arresting layer configured to inhibit formation of at least one uniform crack in the bonding layer.