| 摘要 |
PURPOSE: To provide a semiconductor device and a circuit superior in adhesive properties and barrier properties by a method, wherein a TiW target is sputtered in a nitrogen-containing atmosphere in a sputtering device to form a TiWN layer on a first conductor, nitrogen is exhausted from a sputtering atmosphere, and a TiW target is sputtered in a nitrogen-free atmosphere. CONSTITUTION: A dielectric layer 14 is arranged on a substrate 12 and provided with an opening 16, which is extended to the part of the substrate 12 where a contact is formed. The dielectric layer 14 is made to serve as an inactivated film and an insulating layer provided onto an electronic substrate, and a silicon oxide film is favorable for serving as the dielectric layer 14. A first conductor layer 18 is formed on the substrate 12 provided with an opening (window) 16. Titanium-tungsten (TiW) is material favorable for the conductor layer 18 as an adhesion accelerating layer. The TiW conductor layer 18 is covered with titanium-tungsten-nitride (TiWN layer) 20. The TiWN layer 20 is successively coated with a TiWN layer 22. For instance, a metal layer 24 is formed on the TiWN layer 22. Furthermore, a sacrifice TiW layer 26 is provided onto the metal layer 24. |
