| 摘要 |
This is a structure of, and method for preparation of, molybdenum resistors in a superconductor integrated circxuit. It utilizes a pattern superconductor film; applying a titanium film on the patterned superconductor film; and then applying a molybdenum film on the titanium film to provide a titanium-molybdenum, etch-stop interface; applying a patterned resist film on the molybdenum film; etching the exposed molybdenum film to expose a portion of the titanium-molybdenum, etch-stop interface; and oxidizing the exposed titanium-molybdenum, etch-stop interface. The titanium-molybdenum etch stop interface protects the patterned superconductor film and the support (including any other underlayers) and increases processing margins for the etch time. Preferably the etching of the exposed molybdenum film is by reactive ion etching and oxidizing the exposed titanium-molybdenum etch stop interface is by exposing the interface to a plasma containing about 25-75 volume percent oxygen and 25-75 volume percent argon, and the titanium film is about 50-500 Angstroms thick.
|
