发明名称
摘要 The improved process for making diamond and cubic boron nitride compacts comprises embedding within the mass of abrasive crystals (18) at least one partition strip (20) subdividing the abrasive crystal mass (18), which partition strip (20) is characterized by maintaining segregation between the separate portions of the abrasive crystal mass during step A and being sufficiently pliable no to resist the compaction of the abrasive crystal masses; subjecting a mass of abrasive crystals (18) selected from the group consisting of diamond, cubic boron nitride and mixtures thereof, which mass is in contact with a source of catalyst/solvent for recrystallization of the abrasive crystals, to conditions of temperature, pressures and time which result in a compact having intercrystal bonding between adjacent crystal grains; recovering the compact produced; and removing substantially all of the metallic phase from the compact of step B.
申请公布号 JPH0341425(B2) 申请公布日期 1991.06.24
申请号 JP19820129090 申请日期 1982.07.26
申请人 发明人
分类号 B01J3/03;B01J3/06;B22F7/00;C04B35/52;C04B35/583;C04B35/5831;C22C1/05;E21B10/56;E21B10/567 主分类号 B01J3/03
代理机构 代理人
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