Partitioning semiconductor disk, esp. silicon - by trenches using cutting edge disk having buffer layer

摘要

Disk of semiconductor material, esp. Si, is partitioned between several structural elements using a tracer device with trenches of several microns thickness. During the process the disk is supplied with a foil and a buffer layer. Elastic buffer layer (3) lies on the disk and trenches (5) are formed using a cutting edge (1). Cutting edge (1) is pref. applied at 20-100N, 70-90N to 475 microns thick Si disks. Shore elasticity of the buffer layer (3) is pref. 20-95 (60-70). Cutting edge, which is pref. wedge-shaped, is placed at an angle of less than 1 deg. to the disk. Buffer layer (3) is pref. formed of a uniform plate with recesses with ratio of the openings of the recesses to the buffer layer is 5.8-0.65. USE/ADVANTAGE - Wafers of usual size carrying a number of single chips, can be partitioned and contain thin membrane regions or other micromechanically mfrd. partitioned regions. Process is fully automated.