| 发明名称 |
METALLIZATION LAYER STRUCTURE FORMED ON ALUMINUM NITRIDE CERAMICS AND METHOD OF PRODUCING THE METALLIZATION LAYER STRUCTURE |
| 摘要 |
<p>A metallization layer structure includes an intermediate layer (15) formed on an aluminum nitride ceramics base (11). The intermediate layer contains aluminum titanium nitride. A titanium layer (12) is formed on the intermediate layer. A heat-resistant metallic layer (13) is formed on the titanium layer. A metallic layer (14) for facilitating soldering or brazing is formed on the heat-resistant metallic layer.</p> |
| 申请公布号 |
KR910006948(B1) |
申请公布日期 |
1991.09.14 |
| 申请号 |
KR19880010882 |
申请日期 |
1988.08.26 |
| 申请人 |
FUJITSU CO.,LTD. |
发明人 |
HARADA SHISEKI;SUKIMOTO MASAHIRO |
| 分类号 |
C23C14/06;C04B41/51;C04B41/52;C04B41/89;C23C14/14;C23C14/18;C23C14/58;H01L23/10;H05K1/03;H05K3/38;(IPC1-7):H01L21/88 |
主分类号 |
C23C14/06 |
| 代理机构 |
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代理人 |
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