发明名称 Method of preventing dislocation multiplication of bulk HgCdTe and LPE films during low temperature anneal in Hg vapor
摘要 The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200 DEG C. below the sample temperature, heating the group II element to a temperature from about 5 DEG to about 50 DEG C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350 DEG to 650 DEG C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325 DEG C.
申请公布号 US5079192(A) 申请公布日期 1992.01.07
申请号 US19900573515 申请日期 1990.08.24
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TREGILGAS, JOHN H.;CHANDRA, DIPANKAR
分类号 H01L21/477 主分类号 H01L21/477
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