发明名称 Package-in-package using through-hole via die on saw streets
摘要 A semiconductor device includes a first die having top, bottom, and peripheral surfaces. A bond pad is formed over the top surface. An organic material is connected to the first die and disposed around the peripheral surface. A via hole is formed in the organic material. A metal trace connects the via hole to the bond pad. A conductive material is deposited in the via hole. A redistribution layer (RDL) has an interconnection pad disposed over the top surface of the first die.
申请公布号 US9524938(B2) 申请公布日期 2016.12.20
申请号 US201313845409 申请日期 2013.03.18
申请人 STATS ChipPAC Pte. Ltd. 发明人 Do Byung Tai;Kuan Heap Hoe;Chow Seng Guan
分类号 H01L23/48;H01L23/52;H01L29/40;H01L23/538;H01L21/56;H01L21/683;H01L23/00;H01L25/065;H01L25/00;H01L23/31 主分类号 H01L23/48
代理机构 Patent Law Group: Atkins and Associates, P.C. 代理人 Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C.
主权项 1. A semiconductor device, comprising: a first semiconductor die; an insulating material disposed around a peripheral region of the first semiconductor die including a first surface of the insulating material coplanar with a first surface of the first semiconductor die; a conductive via formed through the insulating material with a side surface of the conductive via coplanar with a side surface of the insulating material; a bond pad formed on the first surface of the first semiconductor die; a conductive trace formed between the bond pad and the conductive via; and a second semiconductor die disposed over the first surface of the first semiconductor die.
地址 Singapore SG