发明名称 |
Package-in-package using through-hole via die on saw streets |
摘要 |
A semiconductor device includes a first die having top, bottom, and peripheral surfaces. A bond pad is formed over the top surface. An organic material is connected to the first die and disposed around the peripheral surface. A via hole is formed in the organic material. A metal trace connects the via hole to the bond pad. A conductive material is deposited in the via hole. A redistribution layer (RDL) has an interconnection pad disposed over the top surface of the first die. |
申请公布号 |
US9524938(B2) |
申请公布日期 |
2016.12.20 |
申请号 |
US201313845409 |
申请日期 |
2013.03.18 |
申请人 |
STATS ChipPAC Pte. Ltd. |
发明人 |
Do Byung Tai;Kuan Heap Hoe;Chow Seng Guan |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L23/538;H01L21/56;H01L21/683;H01L23/00;H01L25/065;H01L25/00;H01L23/31 |
主分类号 |
H01L23/48 |
代理机构 |
Patent Law Group: Atkins and Associates, P.C. |
代理人 |
Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C. |
主权项 |
1. A semiconductor device, comprising:
a first semiconductor die; an insulating material disposed around a peripheral region of the first semiconductor die including a first surface of the insulating material coplanar with a first surface of the first semiconductor die; a conductive via formed through the insulating material with a side surface of the conductive via coplanar with a side surface of the insulating material; a bond pad formed on the first surface of the first semiconductor die; a conductive trace formed between the bond pad and the conductive via; and a second semiconductor die disposed over the first surface of the first semiconductor die. |
地址 |
Singapore SG |