| 摘要 |
<p>A slope etching process including dipping a pattern forming layer into a predetermined dipping solution containing an etching solution for wet etching and a deionized water, so as to utilize a wet etching method only for isotropy etching. There is also provided a slope etching process including forming a photoresist pattern layer having inclined edges and etching the photoresist pattern layer together with the pattern forming layer by using a gas mixture containing an etching gas for dry etching and O2 gas, so as to utilize a RIE method only for anisotropy etching. According to the processes, it is possible to slope etch the pattern forming layer so as to form a pattern layer having a desired edge slope. Furthermore, the step coverage after process integration and the productivity can be improved. <IMAGE></p> |
