Plasma processing apparatus.

摘要

A plasma processing apparatus comprises: a first electrode (1) connectable with a plasma generating power source; a second electrode (2) capable of supporting a substrate (6) to be subjected to a plasma-involving surface treatment; a third electrode (3) enclosing a space between the first and second electrodes, all the electrodes being positioned in an evacuatable chamber; and potential control means (10) for controlling the potential of the third electrode. <IMAGE>