METHOD AND APPARATUS OF HYDROGEN ANNEALING FOR THE SEMICONDUCTOR MANUFACTURING PROCESS

摘要

The hydric annealing method for removing an unstable coupling in the neighborhood of a boundary of silicon-metallic film or silicon- SiO2 film upon alloy process to stabilize device charactristics comprises the steps of saturating an heating furnace (10) as N2 gas; injecting pure H2 gas into the furnace (10) to anneal a wafer under H2 atmosphere; and supplying N2 gas into the furnace (10), exhausting the H2 has to the exterior of the furnace gradually and burning the H2 gas in advance by using a lighting means. The lighting means comprises a number of ignition coils (21,23,25) controlled by an ignition control means (20).