| 发明名称 |
THE METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE |
| 摘要 |
Methods for forming the fin field effect transistor (FinFET) device structure are provided. The method includes forming first fin structures and second fin structures on a first region and a second region of a substrate, respectively, and a number of the first fin structures is greater than a number of the second fin structures. The method also includes forming a sacrificial layer on the first fin structures and the second fin structures and performing an etching process to the sacrificial layer to form an isolation structure on the substrate. |
| 申请公布号 |
US2016379888(A1) |
申请公布日期 |
2016.12.29 |
| 申请号 |
US201615236765 |
申请日期 |
2016.08.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHAO Yi-Cheng;CHANG Chai-Wei;WU Po-Chi;LI Jung-Jui |
| 分类号 |
H01L21/8234;H01L21/308;H01L29/06;H01L27/088;H01L21/762 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a fin field effect transistor (FinFET) device structure, comprising:
forming first fin structures and second fin structures on a first region and a second region of a substrate, respectively, wherein a number of the first fin structures is greater than a number of the second fin structures; forming a sacrificial layer on the first fin structures and the second fin structures; and performing an etching process to the sacrificial layer to form an isolation structure on the substrate. |
| 地址 |
Hsinchu TW |
