Semiconductors for microelectronic components with high resistance against ionising radiation

摘要

Semiconducting structure for microelectronic components with high resistance against ionising radiation, especially high-energy ions of cosmic radiation, including a semiconducting active layer (1) placed at the surface of an insulating layer (2), characterised in that the substrate situated under the insulating layer includes a layer of a heavily doped or degenerate N- or P-type semiconductor material (4), situated directly under the insulating layer (2). <IMAGE>