发明名称 |
Method for fabricating laser generated I.C. masks |
摘要 |
An improved method of making masks includes forming a layer of amorphous silicon of about 2,000 angstroms on a transparent substrate. A laser beam is directed through the transparent substrate traverses the amorphous silicon to form a pattern of crystallized silicon. The n-crystallized silicon is etched leaving a patterned substrate. The patterned substrate is used as a mask for exposing photoresist on semiconductor elements.
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申请公布号 |
US5104481(A) |
申请公布日期 |
1992.04.14 |
申请号 |
US19900613964 |
申请日期 |
1990.11.15 |
申请人 |
LASA INDUSTRIES, INC. |
发明人 |
DOOLEY, DANIEL J.;ELSEA, JR., ARTHUR R. |
分类号 |
G03F1/08 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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