| 摘要 |
<p>PURPOSE:To move photoelectrons in a resist for X-rays in the direction of an electric field and regulate the direction in which the photoelectrons are dispersed so as to prevent the edge of a resist pattern from being blurred and enhance resolution by exposing the resist for X-rays to X-rays while applying an electric field roughly along the direction in which the X-rays are applied. CONSTITUTION:When X-rays 18 are caused to emit from an X-ray source 17 and applied to a mask 14 from above, that part of the X-rays 18 which is applied to an X-ray absorber 16 is absorbed there and the other part is transmitted through the mask 14 and applied to an X-ray resist 12. The energy of the X-rays applied to the resist 12 is absorbed within the resist 12 in the form of photoelectron emission and photoelectrons 20 are released into the resist 12 and chemically react with the resist 12. Because an electric field 26 is formed within the resist 12 roughly along the direction in which the X-rays 18 are applied, the photoelectrons 20 are absorbed by the electric field 26 in the direction of a + electrode 22. Dispersion of the photoelectrons 20 in the direction along a resist film (cross direction) is therefore restrained and the edge of a resist pattern formed on a wafer 10 is prevented from being blurred.</p> |
