| 摘要 |
A positive photoresist composition comprises 10-50 wt. pts. (pref. 20-30 wt. pts.) quinone diazide compound of formular (I) [where D1-3 is hydrogen, benzoquinone-1,2-diazide-4-sulfonyl, naphtoquinone-1,2-diazide-4-sulfonyl or naphtoquinone-2,1-diazide-4-sulfonyl radical, and R is C1-5 alkyl, alkoxy or phenyl group , 20-90 wt. pts. (pref. 65085 wt. pts.) novolak resin of formular (II) [where R is hydrogen or methyl ,0-10 wt. pts. additive of formular (III) [where R1 is hydrogen or methyl and R2 is hydrogen, methyl and alkoxy group and 50-90 wt. pts. solvent. The composition has a good resolving power and contrast property, and is useful for producing a semiconductor device.
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