| 摘要 |
An image sensor with semiconductors comprises a charge storage part which includes a first network of capacitors (14) intended for storing signal charges which are read in a pixels part (4), control means (16) intended to control the transfer of signal charges stored in the first network of capacitors, these control means being incorporated into a stage which is placed following the first network of capacitors (14), and a second network of capacitors (15) which is intended for storing the signal charges which are transferred by the control means. In this structure, charges which are stored by the first network of capacitors (14) during a horizontal period are read in the second network of capacitors (15) during the following horizontal period, which makes it possible to have sufficient time available for the storage of charges. <IMAGE>
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