发明名称 |
HALL EFFECT SENSING ELEMENT |
摘要 |
In one aspect, a Hall Effect sensing element (100) includes a Hall plate (114) having a thickness less than about 100 nanometers an adhesion layer (110) directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element (100') includes a substrate (102) that includes one of a semiconductor material or an insulator material, an insulation layer (106) in direct contact with the substrate, an adhesion layer (110) having a thickness in a range of about.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate (114) in direct contact with the adhesion layer and having a thickness less than about 100 nanometers. |
申请公布号 |
WO2016164265(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
WO2016US25547 |
申请日期 |
2016.04.01 |
申请人 |
ALLEGRO MICROSYSTEMS, LLC |
发明人 |
TAYLOR, William, P.;WONG, Harianto |
分类号 |
H01L43/06;H01L43/10;H01L43/14 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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