发明名称 HALL EFFECT SENSING ELEMENT
摘要 In one aspect, a Hall Effect sensing element (100) includes a Hall plate (114) having a thickness less than about 100 nanometers an adhesion layer (110) directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element (100') includes a substrate (102) that includes one of a semiconductor material or an insulator material, an insulation layer (106) in direct contact with the substrate, an adhesion layer (110) having a thickness in a range of about.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate (114) in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.
申请公布号 WO2016164265(A1) 申请公布日期 2016.10.13
申请号 WO2016US25547 申请日期 2016.04.01
申请人 ALLEGRO MICROSYSTEMS, LLC 发明人 TAYLOR, William, P.;WONG, Harianto
分类号 H01L43/06;H01L43/10;H01L43/14 主分类号 H01L43/06
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