| 摘要 |
The manufacturing method for semiconductor device comprises (A) forming gate oxide film, gate, gate side wall, source and drain region on a given area of semiconductor substrate, (B) coating thereon with a first oxide film and making a contact window, (C) successively depositing pad polysilicon and a second oxide film thereon, (D) etching pad polysilicon and the second oxide film, (E) forming insulation film on both sides of pad polysilicon, (F) making a contact window for capacitor and forming a capacitor composed of storage polysilicon, dielectric material and plate polysilicon, and (G) depositing insulation film thereon and forming bit lines by exposing.
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