| 摘要 |
Semiconductor pressure sensor equipped with a diaphragm and a penetration area situated on the same side of a base, characterized in that it has at least one diaphragm (13) covering the sensor reference chamber (15), whereas the said diaphragm is made of silicon nitride, and on the diaphragm there is at least one plate (24) of connected in parallel condensers sensitive to pressure changes, and the plates (24) are deformed together with the diaphragm (13), whereas at least one penetration area (12) located directly at the diaphragm (13) is separated from the said diaphragm (13) with a piece of polysilicon layer (10).<IMAGE>
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