| 摘要 |
<p>The CCD shift register has an array of transfer electrodes (32), each comprising a pair of storage and transfer gate electrodes (32S, 32T), which are formed on a semiconductor substrate (31) through a gate insulator (30). A semiconductor region under each storage gate electrode (32S) is divided in to a plurality of subregions (31, 34) by using impurities. The CCD shift register characteristics are improved in the transfer efficiency with a minimal decrease in the amount of electric charge that can be handled. <IMAGE></p> |
