发明名称 |
SEMICONDUCTOR MEMORY SENSOR AMP DRIVE CIRCUIT |
摘要 |
The sense amplifier driver circuit for reducing the noise and improving the stability uses a switched driver transistor (Q10) connected between an external voltage (Vcc) and an earth (Vss) and an associated bias circuit including a MOSFET (Q11) which forms a current miller circuit with the driver transistor (Q10), to raise the peak current of the sense amplifier driving signal. A constant current source has a MOSFET (Q14) supplied with bias voltage (Vbias) at its gate lying between the externl voltage (Vcc) and the earth voltage (Vss). The bias circuit controls the gate voltage of the driver transistor (Q10) for increasing the peak current of the sense amplifier driving signal.
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申请公布号 |
KR920010346(B1) |
申请公布日期 |
1992.11.27 |
申请号 |
KR19900007388 |
申请日期 |
1990.05.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN, DONG - SON;HWANG, HONG - SON;JIN, DAE - JE;JO, SU - IN |
分类号 |
G11C11/419;G11C7/06;G11C11/407;G11C11/409;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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