| 摘要 |
PURPOSE:To form epitaxial crystal layers different in crystallinity type free of domain boundaries by epitaxial growth under specified conditions on a substrate consisting of a first region made of a small just plane and a second region made of monoatomic layer or monomolecular layer steps. CONSTITUTION:A first epitaxial crystal layer 5 of the same material and same crystallinity type A as those of a substrate 4 is formed on this substrate 4, and a second epitaxial crystal layer 6 of the same material and a different crystallinity type B on the first epitaxial crystal layer 5. In such a case, under the same condition as that for growing an epitaxial grown layer of crystallinity type B on a just substrate of crystallinity type A, those layers are epitaxially grown on a substrate 4 consisting of a first region made of a just plane where the base plane of epitaxial growth is narrower than a domain generated when a layer of crystallinity type B is grown on a just substrate of crystallinity type A. |
