III-V fin on insulator

摘要

A method of forming a semiconductor structure in which a III-V compound semiconductor channel fin portion is formed on a dielectric material is provided. The method includes forming a III-V material stack on a surface of a bulk semiconductor substrate. Patterning of the III-V material stack is then employed to provide a pre-fin structure that is located between, and in contact with, pre-pad structures. The pre-pad structures are used as an anchoring agent when a III-V compound semiconductor channel layer portion of the III-V material stack and of the pre-fin structure is suspended by removing a topmost III-V compound semiconductor buffer layer portion of the material stack from the pre-fin structure. A dielectric material is then formed within the gap provided by the suspending step and thereafter a fin cut process is employed.

主权项

1. A method of forming a semiconductor structure, said method comprising:
providing a III-V material stack on a surface of a bulk semiconductor substrate, said III-V material stack comprising from bottom to top, a first III-V compound semiconductor buffer layer, a second III-V compound semiconductor buffer layer, and a III-V compound semiconductor channel layer; patterning said III-V material stack to provide at least one pre-fin structure located between and directly contacting a pair of pre-pad structures; suspending a remaining portion of said III-V compound semiconductor channel layer within said at least one pre-fin structure using each pre-pad structure as an anchoring element; forming a first dielectric material surrounding said at least one pre-fin structure and said pair of pre-pad structures, wherein a portion of said first dielectric material fills a gap located between said remaining portion of said III-V compound semiconductor channel layer that is suspended within said pre-fin structure and an underlying remaining portion of said first III-V compound semiconductor buffer layer; performing a fin cutting process to provide openings separating remaining portions of said at least one pre-fin structure and remaining portions of said pair of pre-pad structures; and forming a second dielectric material within each opening, said second dielectric material having a topmost surface that is located beneath a bottommost surface of said remaining portion of said III-V compound semiconductor channel layer of said remaining portions of said at least one pre-fin structure.