| 发明名称 | Non-volatile memory device | ||
| 摘要 | A non-volatile memory device includes a first electrode layer extending in a first direction and a first channel body extending through the first electrode layer in a second direction. The first electrode layer has, on a side surface, a first projecting portion expanding in a third direction perpendicular to the first direction and the second direction, and having a rounding shape in a tip of the first projecting portion. | ||
| 申请公布号 | US9484298(B1) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514847902 | 申请日期 | 2015.09.08 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Noda Kotaro;Yamada Tomohiro |
| 分类号 | H01L23/522;H01L27/115;H01L23/535;H01L23/532 | 主分类号 | H01L23/522 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A non-volatile memory device comprising: a first electrode layer extending in a first direction; and a first channel body extending through the first electrode layer in a second direction, the first electrode layer having, on a side surface, a first projecting portion expanding in a third direction perpendicular to the first direction and the second direction, and having a rounding shape in a tip of the first projecting portion. | ||
| 地址 | Minato-ku JP | ||