| 摘要 |
<p>This invention relates to a light detecting device comprising a first conduction-type semiconductor substrate (21), a first conduction-type semiconductor crystal layer (22) formed on the surface of the substrate (21), and a second conduction-type first region (23) formed in the semiconductor crystal layer (22). The first region (23) is surrounded by a second conduction-type second region (24). On the surface of the semiconductor crystal layer, an electrode (25) is formed on the first region (23), and a reflection preventing layer (26) is formed on that part of the first region (23) inside the electrode (25), and a device protecting film (27) is formed on that part of the first region (23) outside the electrode (25). On the semiconductor crystal layer (22), a metal film (31) is formed in contact both with the semiconductor crystal layer (22) and with the second region (24). This structure enables the second region (24) to capture unnecessary charges and further to recombine and extinguish them. <IMAGE></p> |
