Through hole connection structure mfr. for multilayer integrated circuit - selectively etching insulating layer and using CVD process with gas containing titanium and forming conducting layers for coupling to connecting layer

摘要

A connecting structure is formed between conducting layers of a semiconductor device between an upper layer (73) and a lower layer (59). The lower layer is selectively etched on its oxide layer (61) to form a through hole (63) whereby an oxide layer forms (67). A Titanium Silicide layer (69) is formed on the oxide layer by a CVD (Chemical Vapour Deposition) process. A conducting layer (71) is then formed. ADVANTAGE - Uses conductive layer to reduce natural oxide layer, without excessive penetration into lower conductive layer.