| 摘要 |
Disclosed is a method of fabricating a fine pattern by using selective surface reaction such as silylation reaction. A resist for dry development is applied on a semiconductor wafer having an alignment mark formed at a predetermined reference position and comprising a stepped portion. By selectively irradiating the resist by ultraviolet light or electron beams in accordance with a predetermined pattern with reference to the position of the alignment mark, the pattern is transferred onto the resist. A silylated layer of high etching-resistant is selectively formed in a surface of the resist by causing silylation reaction at least in a region of the alignment mark and either a region irradiated by energy beams or a non-irradiated region. This is induced by irradiation of the electron beams or the ultra-violet light, and resulted from the resist heated to a predetermined temperature. Thereafter, before developing the pattern transferred onto the resist, by scanning the resist in a region including at least the alignment mark with the electron beams, the registration of the pattern with the semiconductor wafer is checked. The check of the registration is performed by detecting electrons reflected from the alignment mark and an Auger electrons emitted from the silicon atoms in the silylated layer. The resist can be removed without damaging the underlying substrate even if out-of-registration is detected.
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