| 摘要 |
The manufacturing method of NPN type transistor comprises (a) forming SiO2 layer (2) on the P type substrate (1) by selective oxidation, (b) growing P-EPI layer (3), (c) etching silicon on (3), (d) forming SiO2 layer on (3) and P-POLY layer (5) by thermal oxidation, (e) opening the active region to transplant N+, (f) forming buried layer (7) on (6) and forming a second EPI layer (7') thereon, (g) recrystallizing by annealing, (h) forming oxide film (8) on (2) and (7'), (i) transplanting N+ thereon to form coated poly layer (9), (j) etching the coated poly layer (9) for base terminals, (k) transplanting N+ to form emitter and collector regions, and (1) forming terminals (B,E,C) and protection layer (10).
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