Electronic device and method for fabricating the same

摘要

The disclosed technology provides an electronic device and a fabrication method thereof, in which an etching margin in formation of a variable resistance element is secured and process difficulty is reduced. An electronic device according to an implementation includes a semiconductor memory, the semiconductor memory including: a variable resistance element including a stack of a first magnetic layer, a tunnel barrier layer and a second magnetic layer; a contact plug coupling a top of the variable resistance element and including a magnetism correcting layer; and a conductive line coupled to the variable resistance element through the contact plug including the magnetism correcting layer.

主权项

1. An electronic device comprising a semiconductor memory,
the semiconductor memory comprising: a variable resistance element including a stack including a first magnetic layer having a variable magnetization, a tunnel barrier layer, and a second magnetic layer having a pinned magnetization; a contact plug coupling a top of the variable resistance element and including a magnetism correcting layer that produces a magnetic field at the variable resistance element to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer; and a conductive line coupled to the variable resistance element through the contact plug including the magnetism correcting layer.