发明名称 Semiconductor device
摘要 A semiconductor device suitable for preventing malfunction is provided.;The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.
申请公布号 US9508672(B2) 申请公布日期 2016.11.29
申请号 US201514722895 申请日期 2015.05.27
申请人 ROHM CO., LTD. 发明人 Okumura Hiroshi
分类号 H01L23/31;H01L23/498;H01L25/00;H01L23/00;H01L23/522;H01L23/525;H01L23/532 主分类号 H01L23/31
代理机构 Hamre, Schumann, Mueller & Larson, P.C. 代理人 Hamre, Schumann, Mueller & Larson, P.C.
主权项 1. A semiconductor device comprising: a semiconductor chip comprising a semiconductor substrate, a wiring layer formed directly on the semiconductor substrate, and an insulating layer covering the wiring layer; a first electrode pad laminated on the insulating layer of the semiconductor chip; a second electrode pad laminated on the insulating layer of the semiconductor chip; an intermediate layer having a rectangular shape defined by a first edge and a second edge; and a plurality of bumps arranged to sandwich the intermediate layer by cooperating with the semiconductor chip; wherein the first edge extends in a first direction crossing a thickness direction of the semiconductor chip, the second edge extends in a second direction crossing both of the thickness direction and the first direction, the plurality of bumps include a first bump electrically connected to the first electrode pad, the plurality of bumps include a second bump electrically connected to the first electrode pad via the second electrode pad, wherein both the first electrode pad and the second electrode pad are electrically connected to the wiring layer of the semiconductor chip, and wherein the first bump is placed along the first edge of the intermediate layer, and the second bump is placed along the second edge of the intermediate layer.
地址 Kyoto JP